The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Jan. 13, 2012
Kung-hwa Wei, HsinChu, TW;
Jeng-tzong Sheu, HsinChu, TW;
Chen-chia Chen, Changhua County, TW;
Mao-yuan Chiu, Hualien County, TW;
Kung-Hwa Wei, HsinChu, TW;
Jeng-Tzong Sheu, HsinChu, TW;
Chen-Chia Chen, Changhua County, TW;
Mao-Yuan Chiu, Hualien County, TW;
National Chiao Tung University, Hsin-Chu, TW;
Abstract
The present invention provides an optoelectronic memory device, the method for manufacturing and evaluating the same. The optoelectronic memory device according to the present invention includes a substrate, an insulation layer, an active layer, source electrode and drain electrode. The substrate includes a gate, and the insulation layer is formed on the substrate. The active layer is formed on the insulation layer, and more particularly, the active layer is formed of a composite material comprising conjugated conductive polymers and quantum dots. Moreover, both of the source and the drain are formed on the insulation layer, and electrically connected to the active layer.