The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Oct. 27, 2008
Jianping Yang, Shanghai, CN;
Hong Zhu, Shanghai, CN;
Jieguang Huo, Shanghai, CN;
Abstract
A method for fabricating CMOS image sensor device includes providing a P-type semiconductor substrate. The semiconductor substrate includes a surface region. The method includes forming a first dielectric layer having a first thickness overlying a first region of the semiconductor substrate. The method includes providing an N type impurity region in a portion of the semiconductor substrate underneath the first dielectric layer to cause formation of a photodiode device region characterized by at least the N type impurity region and the P type substrate. A second dielectric layer having a second thickness is formed in a second region of the surface region. The second dielectric layer is formed within a portion of the first region within the first thickness of the first dielectric layer. The method includes forming a polysilicon gate layer overlying at least the second region to form a contact member coupled to the second region.