The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 21, 2012

Filed:

Aug. 16, 2007
Applicants:

Sung-churl Choi, Seoul, KR;

Sang-hoon Lee, Seoul, KR;

Jin-seok Lee, Seoul, KR;

Yun-ki Byeun, Seoul, KR;

Inventors:

Sung-Churl Choi, Seoul, KR;

Sang-Hoon Lee, Seoul, KR;

Jin-Seok Lee, Seoul, KR;

Yun-Ki Byeun, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Single-crystal silicon carbide nanowires and a method for producing the nanowires are provided. The single-crystal silicon carbide nanowires have a very high aspect ratio and can be used for the fabrication of nanoelectronic devices, including electron gun emitters and MEMS probe tips, for use in a variety of displays and analyzers. Further provided is a filter comprising the nanowires. The filter is applied to systems for filtering vehicle engine exhaust gases to achieve improved filtering performance and increased lifetime.


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