The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2012
Filed:
Dec. 03, 2010
Peng Liu, Beijing, CN;
Duan-liang Zhou, Beijing, CN;
Pi-jin Chen, Beijing, CN;
Zhao-fu HU, Beijing, CN;
Cai-lin Guo, Beijing, CN;
Bing-chu Du, Beijing, CN;
Shou-shan Fan, Beijing, CN;
Peng Liu, Beijing, CN;
Duan-Liang Zhou, Beijing, CN;
Pi-Jin Chen, Beijing, CN;
Zhao-Fu Hu, Beijing, CN;
Cai-Lin Guo, Beijing, CN;
Bing-Chu Du, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., Tu-Cheng, New Taipei, TW;
Abstract
A method for making a field emission device includes the following steps. An insulative substrate is provided. An electron pulling electrode is formed on the insulative substrate. A secondary electron emission layer is formed on the electron pulling electrode. A first dielectric layer is fabricated. The first dielectric layer has a second opening to expose the secondary electron emission layer. A cathode plate having an electron output portion is provided. An electron emission layer is formed on part surface of the cathode plate. The cathode plate is placed on the first dielectric layer. The electron output portion and the second opening have at least one part overlapped, and at least one part of the electron emission layer is oriented to the secondary electron emission layer via the second opening.