The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2012

Filed:

Nov. 20, 2008
Applicants:

Anxiao Jiang, College Station, TX (US);

Robert Mateescu, Pasadena, CA (US);

Moshe Schwartz, Rehovot, IL;

Jehoshua Bruck, La Canada, CA (US);

Inventors:

Anxiao Jiang, College Station, TX (US);

Robert Mateescu, Pasadena, CA (US);

Moshe Schwartz, Rehovot, IL;

Jehoshua Bruck, La Canada, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 13/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

We investigate a novel storage technology, Rank Modulation, for flash memories. In this scheme, a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, and overshoot errors when programming cells (a serious problem that reduces the writing speed), as well as mitigate the problem of asymmetric errors. We present schemes for Gray codes, rewriting and joint coding in the rank modulation paradigm.


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