The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8243530 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 14, 2012

Filed:

Feb. 26, 2010
Applicants:

Sang-gu Kang, Suwon-si, KR;

Hee-won Lee, Seoul, KR;

Ju-seok Lee, Jeongeup-si, KR;

Jung-ho Song, Suwon-si, KR;

Inventors:

Sang-Gu Kang, Suwon-si, KR;

Hee-Won Lee, Seoul, KR;

Ju-Seok Lee, Jeongeup-si, KR;

Jung-Ho Song, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.


Find Patent Forward Citations

Kang, Sang-Gu. (2012). Non-volatile memory device (U.S. Patent No. 8243530). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8243530

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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