The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jun. 06, 2008
Phase change memory device having write driving control signal corresponding to set/reset write time
Hee Bok Kang, Chungcheongbuk-do, KR;
Suk Kyoung Hong, Gyeonggi-do, KR;
Hee Bok Kang, Chungcheongbuk-do, KR;
Suk Kyoung Hong, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A phase change memory device includes a phase change resistance cell configured to sense a crystallization state that changes in response to a current so that data corresponding to the crystallization state can be stored in the phase change resistance cell. A write driving control signal generating unit outputs a write enable signal and a precharge enable signal in response to a write control signal that corresponds to a heating period and a quenching period of the write data. A write driving unit is configured to supply a driving voltage corresponding to the write data to the phase change resistance cell in response to the write enable signal and the precharge enable signal.
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