The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2012

Filed:

Jun. 02, 2009
Applicants:

Yusuke Otake, Toyama, JP;

Mitsuyoshi Mori, Kyoto, JP;

Shinzou Kouyama, Osaka, JP;

Toru Okino, Osaka, JP;

Inventors:

Yusuke Otake, Toyama, JP;

Mitsuyoshi Mori, Kyoto, JP;

Shinzou Kouyama, Osaka, JP;

Toru Okino, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01);
U.S. Cl.
CPC ...
Abstract

A solid-state image sensor includes: a semiconductor substrate; a plurality of pixelsarranged on the semiconductor substrateand respectively including photoelectric conversion regions; and an isolation regionelectrically isolating the pixelsfrom one another. The first pixelincludes a first photoelectric conversion regionand a first color filterhaving a peak of its optical transmission in a first wavelength range. The second pixeladjacent to the first pixelincludes a second photoelectric conversion regionand a second color filterhaving peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portionof a deep portion of the first photoelectric conversion regionextends across the isolation regionto reach a portion under the second photoelectric conversion region


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