The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Feb. 27, 2009
Makoto Saen, Kodaira, JP;
Kenichi Osada, Tokyo, JP;
Kiyoto Ito, Kodaira, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a test method of stacked LSIs connected by Through Silicon Vias, it is difficult to perform a failure diagnosis by using a conventional device test method to only one side of a silicon wafer, there is a possibility of yield degradation at a stacking time of LSIs, and a plurality of LSIs is connected to one Through Silicon Via so that it is necessary to select and remedy a defective Through Silicon Via taking into account all the device states. These problems cannot be solved by conventional test methods. Therefore, for a device test of a Through Silicon Via through a plurality of chips, a circuit that generates a time-series test pattern having both 0 and 1 values for a delay fault test is added to a circuit portion that transmits data to a Through Silicon Via in the stacked LSIs, and a circuit that receives the test pattern and compares the pattern received with a fixed pattern for a match to detect a defect of a Through Silicon Via is added to a circuit portion that receives data from a Through Silicon Via in the stacked LSIs.