The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2012

Filed:

May. 11, 2011
Applicants:

Peter Deelman, Calabasas, CA (US);

Ken Elliott, Thousand Oaks, CA (US);

David Chow, Newbury Park, CA (US);

Inventors:

Peter Deelman, Calabasas, CA (US);

Ken Elliott, Thousand Oaks, CA (US);

David Chow, Newbury Park, CA (US);

Assignee:

HRL Laboratories, LLC, Malibu, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device and method are being disclosed. The semiconductor device discloses an InAs layer, a plurality of group III-V ternary layers supported by the InAs layer, and a plurality of group III-V quarternary layers supported by the InAs layer, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer. The method discloses providing an InAs layer, growing a plurality of group III-V ternary layers, and growing a plurality of group III-V quarternary layers, wherein the group III-V ternary layers are separated from each other by a single group III-V quarternary layer and are supported by the InAs layer.


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