The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jan. 26, 2010
Hiromitsu Tanabe, Nukata-gun, JP;
Kenji Kouno, Gifu, JP;
Yukio Tsuzuki, Nukata-gun, JP;
Shinji Amano, Okazaki, JP;
Hiromitsu Tanabe, Nukata-gun, JP;
Kenji Kouno, Gifu, JP;
Yukio Tsuzuki, Nukata-gun, JP;
Shinji Amano, Okazaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a semiconductor substrate having a first surface and a second surface. A main region and a sensing region are formed on the first surface side of the semiconductor substrate. A RC-IGBT is formed in the main region and a sensing element for passing electric currents proportional to electric currents flowing through the RC-IGBT is formed in the sensing region. A collector region and a cathode region of the sensing element are formed on the second surface side of the semiconductor substrate. The collector region is located directly below the sensing region in a thickness direction of the semiconductor substrate. The cathode region is not located directly below the sensing region in the thickness direction.