The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Sep. 01, 2010
Taisuke Sato, Kanagawa, JP;
Toshiyuki Oka, Kanagawa, JP;
Koichi Tachibana, Kanagawa, JP;
Shinya Nunoue, Chiba, JP;
Kazufumi Shiozawa, Kanagawa, JP;
Takayoshi Fujii, Kanagawa, JP;
Taisuke Sato, Kanagawa, JP;
Toshiyuki Oka, Kanagawa, JP;
Koichi Tachibana, Kanagawa, JP;
Shinya Nunoue, Chiba, JP;
Kazufumi Shiozawa, Kanagawa, JP;
Takayoshi Fujii, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.