The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
May. 16, 2008
Applicants:
Akira Ohmae, Kanagawa, JP;
Masayuki Arimochi, Kanagawa, JP;
Jugo Mitomo, Kanagawa, JP;
Noriyuki Futagawa, Kanagawa, JP;
Tomonori Hino, Kanagawa, JP;
Inventors:
Akira Ohmae, Kanagawa, JP;
Masayuki Arimochi, Kanagawa, JP;
Jugo Mitomo, Kanagawa, JP;
Noriyuki Futagawa, Kanagawa, JP;
Tomonori Hino, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.
Ohmae, Akira. (2012). Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device (U.S. Patent No. 8242513). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8242513
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile