The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jun. 20, 2006
Makoto Kasu, Atsugi, JP;
Toshiki Makimoto, Atsugi, JP;
Kenji Ueda, Atsugi, JP;
Yoshiharu Yamauchi, Kunitachi, JP;
Makoto Kasu, Atsugi, JP;
Toshiki Makimoto, Atsugi, JP;
Kenji Ueda, Atsugi, JP;
Yoshiharu Yamauchi, Kunitachi, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
In a conventional diamond semiconductor element, because of high density of crystal defects, it is impossible to reflect the natural physical properties peculiar to a diamond, such as high thermal conductivity, high breakdown field strength, high-frequency characteristics and the like, in the transistor characteristics. By slightly shifting surface orientation of a diamond substrate in a [001] direction, a significant reduction in crystal defects peculiar to a diamond is possible. The equivalent effects are also provided by shifting surface orientation of a single-crystal diamond thin-film or channel slightly from a [001] direction. It is possible to obtain a significantly high transconductance gm as compared with that in a transistor produced using conventional surface orientation.