The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Oct. 01, 2009
Applicant:
Nobukazu Hirai, Kanagawa, JP;
Inventor:
Nobukazu Hirai, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 29/76 (2006.01); H01L 31/112 (2006.01); H01L 27/108 (2006.01); H01L 29/12 (2006.01); H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A thin film transistor includes an insulating layer formed from an organic material, an oxide material, or a silicon based material, a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material, a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode, and a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.