The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jun. 27, 2009
Won-kyu Kim, Gyeonggi-do, KR;
Won-Kyu Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for forming a fine pattern in a semiconductor device using a quadruple patterning includes forming a first partition layer over a first material layer which is formed over a substrate, performing a photo etch process on the first partition layer to form a first partition pattern, performing an oxidation process to form a first spacer sacrificial layer over a surface of the first partition pattern, forming a second spacer sacrificial layer over the substrate structure, forming a second partition layer filling gaps between the first partition pattern, removing the second spacer sacrificial layer, performing an oxidation process to form a third spacer sacrificial layer over a surface of the second partition layer and define a second partition pattern, forming a third partition pattern filling gaps between the first partition pattern and the second partition pattern, and removing the first and third spacer sacrificial layers.