The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Apr. 14, 2011
Applicants:
Sang M. Han, Albuquerque, NM (US);
Darin Leonhardt, Albuquerque, NM (US);
Inventors:
Sang M. Han, Albuquerque, NM (US);
Darin Leonhardt, Albuquerque, NM (US);
Assignee:
STC.UNM, Albuquerque, NM (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
Exemplary embodiments provide methods of forming semiconductor devices, by which defects formed upon nucleation and coalescence of semiconductor islands can be reduced or eliminated. In one embodiment, an annealing process can be performed prior to coalescence of the semiconductor islands into a continuous semiconductor layer. In another embodiment, high-quality Group III-V materials can be formed on the continuous semiconductor layer.