The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Feb. 16, 2010
Takafumi Ikeda, Yokohama, JP;
Takahito Nakazawa, Funabashi, JP;
Hideaki Maekawa, Yokohama, JP;
Yuuichi Tatsumi, Tokyo, JP;
Toshifumi Minami, Yokohama, JP;
Takafumi Ikeda, Yokohama, JP;
Takahito Nakazawa, Funabashi, JP;
Hideaki Maekawa, Yokohama, JP;
Yuuichi Tatsumi, Tokyo, JP;
Toshifumi Minami, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device has a circuit element region formed on a semiconductor substrate, and a protective pattern formed so as to surround the circuit element region. The protective pattern comprises a first element separation region formed on the semiconductor substrate, a second element separation region formed on the semiconductor substrate and having a width smaller than that of the first element separation region, a first element region formed between the first element separation region and the second element separation region, a first gate layer formed on the first element separation region, a wiring layer formed on the first gate layer, a passivation layer formed above the wiring layer, a second element region, an insulation film formed on the second element region, and a second gate layer formed on the insulation film, the first element separation region, the first element region, the second element separation region and the second element region being located in this order from the nearer side of the circuit element region.