The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jul. 08, 2009
Sébastien Dubois, Scionzier, FR;
Nicolas Enjalbert, Burlats, FR;
Rémi Monna, Fontaine, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
The invention relates to a method of purifying a crystalline silicon substrate and to a process for producing a photovoltaic cell. The method of purifying a crystalline silicon substrate according to the invention is of the type that includes a step of extracting impurities by external gettering and which includes, before said step of extracting the impurities by external gettering, at least one step of rapidly annealing the substrate at a temperature of between 750° C. and 1000° C. inclusive for a time of between 1 second and 10 minutes inclusive. The invention is particularly applicable in the photovoltaic cell field.