The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Jul. 24, 2008
Chan Woo Park, Daejeon, KR;
Chang Geun Ahn, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
IN Bok Baek, Cheongju, KR;
Chil Seong Ah, Daejeon, KR;
Han Young Yu, Daejeon, KR;
An Soon Kim, Daejeon, KR;
Tae Youb Kim, Seoul, KR;
Moon Gyu Jang, Daejeon, KR;
Myung Sim Jun, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
Chang Geun Ahn, Daejeon, KR;
Jong Heon Yang, Daejeon, KR;
In Bok Baek, Cheongju, KR;
Chil Seong Ah, Daejeon, KR;
Han Young Yu, Daejeon, KR;
An Soon Kim, Daejeon, KR;
Tae Youb Kim, Seoul, KR;
Moon Gyu Jang, Daejeon, KR;
Myung Sim Jun, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.