The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Oct. 14, 2009
Jihong Choi, Fishkill, NY (US);
Yongsik Moon, Paramus, NJ (US);
Roderick Augur, Hopewell Junction, NY (US);
Eden Zielinski, Wappingers Falls, NY (US);
Jihong Choi, Fishkill, NY (US);
Yongsik Moon, Paramus, NJ (US);
Roderick Augur, Hopewell Junction, NY (US);
Eden Zielinski, Wappingers Falls, NY (US);
Global Foundries, Inc., Grand Cayman, KY;
Abstract
Methods are provided that relate to the capacitive monitoring of characteristic pertaining to layer formed during the back end-of-the-line (BEOL) processing of a semiconductor device. In one embodiment, a method includes the steps of forming a first capacitor array including first and second overlying contacts each formed in a different one of the plurality of BEOL layers, measuring the interlayer capacitance between the first and second overlying contacts, and converting the measured interlayer capacitance to a distance between the first and second overlying contacts.