The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 2012

Filed:

Mar. 16, 2010
Applicants:

Jun Luo, State College, PA (US);

Wesley S. Hackenberger, State College, PA (US);

Shujun Zhang, State College, PA (US);

Richard J. Meyer, Jr., State College, PA (US);

Thomas R. Shrout, Pennsylvania Furnace, PA (US);

Nevin P. Sherlock, Port Matilda, PA (US);

Inventors:

Jun Luo, State College, PA (US);

Wesley S. Hackenberger, State College, PA (US);

Shujun Zhang, State College, PA (US);

Richard J. Meyer, Jr., State College, PA (US);

Thomas R. Shrout, Pennsylvania Furnace, PA (US);

Nevin P. Sherlock, Port Matilda, PA (US);

Assignees:

TRS Technologies, Inc., State College, PA (US);

Penn State Research Foundation, University Park, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 35/00 (2006.01); H01L 41/18 (2006.01); H01L 41/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(BB)O—Pb(B)O, where Bmay be one ion or combination of Mg, Zn, Ni, Sc, In, Yb, Bmay be one ion or combination of Nb, Ta, W, and Bmay be Tior combination of Tiwith Zrand/or Hf.


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