The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2012
Filed:
Oct. 31, 2008
Yong-woo Lee, Anyang-si, KR;
Young-mi Lee, Seoul, KR;
Min-chul Chae, Suwon-si, KR;
Dae-joung Kim, Suwon-si, KR;
Jae-seung Hwang, Suwon-si, KR;
Yong-Woo Lee, Anyang-si, KR;
Young-Mi Lee, Seoul, KR;
Min-Chul Chae, Suwon-si, KR;
Dae-Joung Kim, Suwon-si, KR;
Jae-Seung Hwang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming an ion implantation mask includes forming a field area on a semiconductor substrate, forming an amorphous carbon layer on the semiconductor substrate, forming a hard mask layer on the amorphous carbon layer, forming an etching mask pattern on the hard mask layer, and etching the hard mask layer and the amorphous carbon layer to expose the field area through the etching mask pattern, wherein etching the hard mask layer and the amorphous carbon layer forms a hard mask layer pattern and an amorphous carbon layer pattern.