The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Sep. 02, 2009
Mario Sako, Yokohama, JP;
Jun Fujimoto, Kamakura, JP;
Noriyasu Kumazaki, Kawasaki, JP;
Yasuhiko Honda, Hiratsuka, JP;
Yoshihiko Kamata, Yokohama, JP;
Mario Sako, Yokohama, JP;
Jun Fujimoto, Kamakura, JP;
Noriyasu Kumazaki, Kawasaki, JP;
Yasuhiko Honda, Hiratsuka, JP;
Yoshihiko Kamata, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory includes a memory cell array, bit lines, a first voltage generator, and a second voltage generator. The memory cell array includes memory cells. The bit lines each of which is connected electrically to one end of the current path of the corresponding one of the memory cells. The first voltage generator which is capable of supplying via a first output terminal to the bit lines a first voltage externally supplied or a third voltage which is obtained by stepping down a second voltage supplied and higher than the first voltage and which is as high as the first voltage. The second voltage generator which is capable of supplying a fourth voltage obtained by stepping down the second voltage to the bit lines via a second output terminal when the first voltage generator steps down the second voltage to generate the third voltage.