The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2012

Filed:

Feb. 03, 2010
Applicants:

Shabbir S. Moochalla, Kendall Park, NJ (US);

William J. Taft, Yardville, NJ (US);

Johan Ramirez, Reading, PA (US);

Inventors:

Shabbir S. Moochalla, Kendall Park, NJ (US);

William J. Taft, Yardville, NJ (US);

Johan Ramirez, Reading, PA (US);

Assignee:

Lockheed Martin Corporation, Bethesda, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03G 3/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a solid state power amplifier (SSPA) having variable output power is provided. The method includes coupling a first transistor device to a second transistor device and biasing a drain input of each of the first and second transistor device. Further, the method includes biasing a gate input of each of the first and second transistor device varying a drain to source current of each of the first and second transistor device to enable the SSPA to maintain high power added efficiency (PAE) and consistent linearity over a range of output power levels.


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