The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Apr. 15, 2010
Mian Z. Smith, Los Altos, CA (US);
Joseph Michael Ingino, Libertyville, IL (US);
Mian Z. Smith, Los Altos, CA (US);
Joseph Michael Ingino, Libertyville, IL (US);
Altera Corporation, San Jose, CA (US);
Abstract
To improve noise rejection, a native (or undoped) NMOS transistor is used as a source follower in place of a conventional common source PMOS transistor in a voltage regulator circuit. The native transistor has a threshold voltage of approximately 0 volts which allows the maximum voltage output of the regulator to be higher by one threshold voltage of a conventional NMOS transistor than might be obtained from a voltage regulator that used a conventional NMOS transistor. Alternatively, a depletion transistor can be used to provide even higher output. In another illustrative embodiment, a conventional bandgap reference circuit is modified by replacing a common source transistor connected to the output of an op amp with a native MOS transistor connected as a source follower.