The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Apr. 09, 2009
Applicant:
Kimitoshi Okano, Kanagawa, JP;
Inventor:
Kimitoshi Okano, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device according to one embodiment includes: forming a fin and a film on a semiconductor substrate, the film being located at least either on the fin or under the fin and on the semiconductor substrate; forming a gate electrode so as to sandwich both side faces of the fin via a gate insulating film; and expanding or shrinking the film, thereby generating a strain in a height direction of the fin in a channel region.