The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Aug. 22, 2011
Applicants:
Ryotaro Yagi, Kyoto, JP;
Isamu Nishimura, Kyoto, JP;
Takahisa Yamaha, Kyoto, JP;
Inventors:
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/43 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film formed on the inner surface of the trench, and a gate electrode made of silicon embedded in the trench through the gate insulating film. The gate electrode has a high-conductivity portion formed to cover the gate insulating film with a relatively high conductivity and a low-conductivity portion formed on a region inside the high-conductivity portion with a relatively low conductivity.