The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Nov. 05, 2008
Takayuki Iwaki, Kanagawa, JP;
Takayuki Iwaki, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
Provided is a semiconductor device including a MIM capacitor, and having excellent waterproof property and antioxidant property even when being formed between wiring layers. The semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first wiring layer embedded in the first insulating film, a wiring cap film for covering the first wiring layer, the MIM capacitor formed on the wiring cap film, a hydrogen barrier film for covering the MIM capacitor, a second insulating film formed on the hydrogen barrier film, conductive plugs passing through the second insulating film and the hydrogen barrier film, one of which being connected to an upper electrode of the MIM capacitor and the other of which being connected to a lower electrode of the MIM capacitor, and a second wiring layer connected to the conductive plugs, and the upper and lower electrodes of the MIM capacitor.