The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Mar. 17, 2008
Applicants:
Harumasa Yoshida, Hamamatsu, JP;
Yasufumi Takagi, Hamamatsu, JP;
Masakazu Kuwabara, Hamamatsu, JP;
Inventors:
Assignee:
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/201 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer.