The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Oct. 24, 2008
Masao Uchida, Hyogo, JP;
Kazuya Utsunomiya, Osaka, JP;
Masashi Hayashi, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device according to the present invention includes: a silicon carbide substrate () that has a principal surface and a back surface; a semiconductor layer (), which has been formed on the principal surface of the silicon carbide substrate; and a back surface ohmic electrode layer (), which has been formed on the back surface of the silicon carbide substrate. The back surface ohmic electrode layer () includes: a reaction layer (), which is located closer to the back surface of the silicon carbide substrate and which includes titanium, silicon and carbon; and a titanium nitride layer (), which is located more distant from the back surface of the silicon carbide substrate.