The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2012

Filed:

Jun. 26, 2009
Applicants:

Zhenan Bao, Stanford, CA (US);

Melburne Lemieux, Lahonda, CA (US);

Justin P. Opatkiewicz, Stanford, CA (US);

Soumendra N. Barman, Stanford, CA (US);

Inventors:

Zhenan Bao, Stanford, CA (US);

Melburne Lemieux, Lahonda, CA (US);

Justin P. Opatkiewicz, Stanford, CA (US);

Soumendra N. Barman, Stanford, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.


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