The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2012

Filed:

Aug. 13, 2010
Applicants:

Sasha Kweskin, St. Louis, MO (US);

Paul Edward Gee, San Jose, CA (US);

Shankar Venkataraman, San Jose, CA (US);

Kedar Sapre, San Jose, CA (US);

Inventors:

Sasha Kweskin, St. Louis, MO (US);

Paul Edward Gee, San Jose, CA (US);

Shankar Venkataraman, San Jose, CA (US);

Kedar Sapre, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/316 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.


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