The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Dec. 27, 2007
Jun-hee Cho, Ichon-shi, KR;
Jun-Hee Cho, Ichon-shi, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for fabricating a semiconductor device to enlarge a channel region is provided. The channel region is enlarged due to having pillar shaped sidewalls of a transistor. The transistor includes a fin active region vertically protruding on a substrate, an isolation layer enclosing a lower portion of the fin active region, and a gate electrode crossing the fin active region and covering a portion of the fin active region. An isolation layer is formed enclosing a lower portion of the fin active region and the isolation layer under the spacers is partially removed to expose a portion of the sidewalls of the fin active region. Subsequently, dry etching is performed to form the sidewalls having a pillar/neck.