The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Feb. 10, 2011
Yong-hoon Son, Yongin-si, KR;
Jin-ha Jeong, Yongin-si, KR;
Jung-ho Kim, Suwon-si, KR;
Vladimir Urazaev, Suwon-si, KR;
Jong-hyuk Kang, Seoul, KR;
Sung-woo Hyun, Seoul, KR;
Yong-hoon Son, Yongin-si, KR;
Jin-ha Jeong, Yongin-si, KR;
Jung-ho Kim, Suwon-si, KR;
Vladimir Urazaev, Suwon-si, KR;
Jong-hyuk Kang, Seoul, KR;
Sung-woo Hyun, Seoul, KR;
Abstract
A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.