The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Dec. 14, 2009
Takako Chinone, Tokyo, JP;
Ji-hao Liang, Tokyo, JP;
Yasuyuki Shibata, Tokyo, JP;
Jiro Higashino, Tokyo, JP;
Takako Chinone, Tokyo, JP;
Ji-Hao Liang, Tokyo, JP;
Yasuyuki Shibata, Tokyo, JP;
Jiro Higashino, Tokyo, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Abstract
A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.