The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Aug. 04, 2009
Juyul Lee, Seoul, KR;
Seungjae Baik, Hwaseong-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Siyoung Choi, Seongnam-si, KR;
Juyul Lee, Seoul, KR;
Seungjae Baik, Hwaseong-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Siyoung Choi, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a method for fabricating a nonvolatile memory device capable of improving charge retention characteristics. The method for fabricating a nonvolatile memory device includes forming a charge trapping layer with a memory region and a charge blocking region on a semiconductor substrate, and trapping charges in the charge blocking region of the charge trapping layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile