The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Mar. 24, 2011
Hiroaki Kikuchi, Tokyo, JP;
Katsunori Kondo, Tokyo, JP;
Shigeru Shinohara, Tokyo, JP;
Osamu Takahashi, Tokyo, JP;
Tomoaki Yamabayashi, Tokyo, JP;
Hiroaki Kikuchi, Tokyo, JP;
Katsunori Kondo, Tokyo, JP;
Shigeru Shinohara, Tokyo, JP;
Osamu Takahashi, Tokyo, JP;
Tomoaki Yamabayashi, Tokyo, JP;
Mitsumi Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film.