The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Sep. 04, 2009
Applicants:
Leslie G. Fritzemeier, Lexington, MA (US);
Ryne P. Raffaelle, Honeoye Falls, NY (US);
Christopher Leitz, Watertown, MA (US);
Inventors:
Leslie G. Fritzemeier, Lexington, MA (US);
Ryne P. Raffaelle, Honeoye Falls, NY (US);
Christopher Leitz, Watertown, MA (US);
Assignees:
Solexant Corp., San Jose, CA (US);
Rochester Institute of Technology, Rochester, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer disposed thereover. The buffer layer may comprise a plurality of islands having an average island spacing therebetween. A polycrystalline semiconductor layer is disposed over the buffer layer.