The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2012
Filed:
Jul. 31, 2008
Takashi Ichihara, Tokushima, JP;
Hirofumi Yoshida, Tokushima, JP;
Takao Yamada, Komatsushima, JP;
Yohei Wakai, Anan, JP;
Takashi Ichihara, Tokushima, JP;
Hirofumi Yoshida, Tokushima, JP;
Takao Yamada, Komatsushima, JP;
Yohei Wakai, Anan, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
A method for manufacturing a semiconductor light emitting element from a wafer in which a gallium nitride compound semiconductor has been laminated on a sapphire substrate having an orientation flat, comprises of: laminating a semiconductor layer on a first main face of the sapphire substrate having an off angle θ in a direction Xo parallel to the orientation flat; forming a first break groove that extends in a direction Y substantially perpendicular to the direction Xo, on the semiconductor layer side; forming a second break line that is shifted by a predetermined distance in the ±Xo direction from a predicted split line within the first break groove and parallel to the first break groove in the interior of the sapphire substrate and corresponding to the inclination of the off angle θ; and splitting the wafer along the first and/or second break line.