Nonvolatile semiconductor memory device with advanced multi-page program operation

Abstract

A nonvolatile semiconductor memory device includes a memory cell array having a plurality of banks and a cache block corresponding to each of the plurality of banks. The cache block has a predetermined data storage capacity. A page buffer is included which corresponds to each of the plurality of banks. A programming circuit programs all of the plurality of banks except a last of said banks with page data. The page data is loaded through each page buffer and programmed into each cache block such that when page data for the last bank is loaded into the page buffer, the loaded page data and the page data programmed into the respective cache blocks are programmed into respective corresponding banks.