The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2012

Filed:

May. 12, 2010
Applicants:

Helmut Moser, Heilbronn, DE;

Daniel Moser, Korntal-Muenchingen, DE;

Inventors:

Helmut Moser, Heilbronn, DE;

Daniel Moser, Korntal-Muenchingen, DE;

Assignee:

Atmel Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for obtaining field strength information from a received electromagnetic signal by a receiver unit, in which an input voltage is generated for an operational amplifier from the received signal in the receiver unit by an input resistance and an output voltage is generated by the operational amplifier by a fixed amplification factor. The input voltage is changed until the output voltage lies within a predefined interval that includes the value of the reference voltage, and hereby the input voltage is tapped at a divider node of a voltage divider and to adjust the output voltage to the reference voltage the gate voltage of the MOS transistor, operating within a nonlinear range, and connected to the divider node is changed in such a way that the forward resistance of the MOS transistor is changed substantially logarithmically and the field strength value received by the receiver unit is determined from a comparison of the value of the present gate voltage with the quantities assigned to the gate voltage values in a memory.


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