The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Jan. 27, 2010
Tomoo Hishida, Yokohama, JP;
Yoshihisa Iwata, Yokohama, JP;
Kiyotaro Itagaki, Yokohama, JP;
Takashi Maeda, Yokohama, JP;
Tomoo Hishida, Yokohama, JP;
Yoshihisa Iwata, Yokohama, JP;
Kiyotaro Itagaki, Yokohama, JP;
Takashi Maeda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A non-volatile semiconductor storage device includes a control circuit performing an erase operation to erase data from a selected one of memory transistors. The control circuit applies a first voltage to the other end of selected one of selection transistors, causes the selected one of the selection transistors to turn on, and causes any one of the memory transistors to turn on that is closer to the selection transistor than the selected one of the memory transistors. The control circuit also applies a second voltage lower than the first voltage to a gate of the selected one of the memory transistors. Such a potential difference between the first voltage and the second voltage causing a change in electric charges in the electric charge storage layer.