The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Nov. 16, 2009
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Chung H. Lam, Yorktown Heights, NY (US);
Bipin Rajendran, Yorktown Heights, NY (US);
Simone Raoux, San Jose, CA (US);
Alejandro G. Schrott, Yorktown Heights, NY (US);
Daniel Krebs, Aachen, DE;
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Chung H. Lam, Yorktown Heights, NY (US);
Bipin Rajendran, Yorktown Heights, NY (US);
Simone Raoux, San Jose, CA (US);
Alejandro G. Schrott, Yorktown Heights, NY (US);
Daniel Krebs, Aachen, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A phase change memory cell that includes a bottom electrode, a top electrode separated from the bottom electrode, and growth-dominated phase change material deposited between the bottom electrode and the top electrode and contacting the bottom electrode and the top electrode and surrounded by insulation material at sidewalls thereof. The phase change memory cell in a reset state only includes an amorphous phase of the growth-dominated phase change material within an active volume of the phase change memory cell.