The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 2012

Filed:

Jan. 13, 2010
Applicants:

Shunsuke Kameda, Kumamoto, JP;

Nobuhiro Karasawa, Kanagawa, JP;

Inventors:

Shunsuke Kameda, Kumamoto, JP;

Nobuhiro Karasawa, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01);
U.S. Cl.
CPC ...
Abstract

A charge detection device includes: a substrate having a first conductive type of predetermined region; a second conductive type of drain region disposed in the predetermined region of the substrate; a second conductive type of source region disposed in the predetermined region of the substrate; a second conductive type of channel region disposed between the drain region and the source region; a gate formed via an insulating film on the channel region; a second conductive type of charge accumulation region disposed in the predetermined region of the substrate and changing a threshold voltage of a transistor having the drain region, the source region, and the gate by accumulating signal charges as a target to be measured; a first conductive type of channel barrier region disposed between the channel region and the charge accumulation region; and a charge sweep region sweeping away the signal charges accumulated in the charge accumulation region.


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