The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Dec. 20, 2007
Miyuki Takeshita, Chiyoda-ku, JP;
Akihiko Iwata, Chiyoda-ku, JP;
Ikuro Suga, Chiyoda-ku, JP;
Shigeki Harada, Chiyoda-ku, JP;
Kenichi Kawabata, Chiyoda-ku, JP;
Takashi Kumagai, Chiyoda-ku, JP;
Kenji Fujiwara, Chiyoda-ku, JP;
Miyuki Takeshita, Chiyoda-ku, JP;
Akihiko Iwata, Chiyoda-ku, JP;
Ikuro Suga, Chiyoda-ku, JP;
Shigeki Harada, Chiyoda-ku, JP;
Kenichi Kawabata, Chiyoda-ku, JP;
Takashi Kumagai, Chiyoda-ku, JP;
Kenji Fujiwara, Chiyoda-ku, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A highly efficient rectifier can readily replace a two-terminal diode. Its conduction losses are reduced from that of the two-terminal diode. Connected between the source and drain of a MOSFET including a parasitic diode are a micro-power converter section for boosting a conduction voltage Vds between the source and drain to a predetermined voltage, and a self-drive control section that operates based on a voltage output from the micro-power converter section. When the source and drain are conductive with each other, the micro-power converter section generates, from the conduction voltage Vds, a power source voltage for the self-drive control section, and the self-drive control section () continues drive control of the MOSFET.