The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Aug. 20, 2008
Young-tae MA, Gyeonggi-do, KR;
In-sun Park, Seoul, KR;
Dong-jo Kang, Gyeonggi-do, KR;
Hyun-seok Lim, Gyeonggi-do, KR;
Do-hyung Kim, Gyeonggi-do, KR;
Young-Tae Ma, Gyeonggi-do, KR;
In-Sun Park, Seoul, KR;
Dong-Jo Kang, Gyeonggi-do, KR;
Hyun-Seok Lim, Gyeonggi-do, KR;
Do-Hyung Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An interconnection structure having an oxygen trap pattern in a semiconductor device, and a method of fabricating the same are provided. The interconnection structure includes a lower interlayer insulating layer formed on a semiconductor substrate. A metal layer pattern and a capping layer pattern are sequentially stacked on the lower interlayer insulating layer. An oxygen trap pattern is disposed on the capping layer pattern and includes a conductive oxygen trap pattern.