The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Jul. 01, 2010
Tetsuo Kunii, Tokyo, JP;
Hirotaka Amasuga, Tokyo, JP;
Yoshitsugu Yamamoto, Tokyo, JP;
Youichi Nogami, Tokyo, JP;
Tetsuo Kunii, Tokyo, JP;
Hirotaka Amasuga, Tokyo, JP;
Yoshitsugu Yamamoto, Tokyo, JP;
Youichi Nogami, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region.