The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Jul. 13, 2009
Yoshiko Kato, Yokohama, JP;
Hiroyuki Kutsukake, Yokohama, JP;
Yoshiko Kato, Yokohama, JP;
Hiroyuki Kutsukake, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device with a high-voltage transistor and a low-voltage transistor includes an isolation insulating film between a first element region of the high-voltage transistor and a second element region of the low-voltage transistor, a first gate insulating film on a semiconductor substrate in the first element region, a first gate electrode on the first gate insulating film, a second gate insulating film on the semiconductor substrate in the second element region, and a second gate electrode on the second gate insulating film. The isolation insulating film includes a first isolation region adjacent to a surrounding area of the first element region and a second isolation region adjacent to a surrounding area of the second element region. A bottom of the second isolation region is lower than a bottom of the first isolation region. The first gate insulating film is thicker than the second gate insulating film.