The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Feb. 26, 2010
Wataru Saito, Kawasaki, JP;
Syotaro Ono, Yokohama, JP;
Hiroshi Ohta, Himeji, JP;
Munehisa Yabuzaki, Yokohama, JP;
Nana Hatano, Kawasaki, JP;
Miho Watanabe, Tokyo, JP;
Wataru Saito, Kawasaki, JP;
Syotaro Ono, Yokohama, JP;
Hiroshi Ohta, Himeji, JP;
Munehisa Yabuzaki, Yokohama, JP;
Nana Hatano, Kawasaki, JP;
Miho Watanabe, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer.